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Anglický jazyk
Current and Breakdown Voltages in 3C-SiC Lateral Power MOSFET
Autor: Vivek Kumar
Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form... Viac o knihe
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O knihe
Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form CO, which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC, including high quality, stable MOS transistors and MOS integrated circuits.
- Vydavateľstvo: LAP LAMBERT Academic Publishing
- Rok vydania: 2020
- Formát: Paperback
- Rozmer: 220 x 150 mm
- Jazyk: Anglický jazyk
- ISBN: 9786202800891
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