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Anglický jazyk
Functionalized InN ISFET for DNA Hybridization Detection
Autor: Lin Cheng-Yi
Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin... Viac o knihe
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O knihe
Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation.
- Vydavateľstvo: ¿¿¿¿¿¿¿
- Rok vydania: 2015
- Formát: Paperback
- Rozmer: 220 x 150 mm
- Jazyk: Anglický jazyk
- ISBN: 9783639819212
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