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Anglický jazyk
High Performance GaN Light-Emitting Diode
Autor: Zonglin Li
The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured.... Viac o knihe
Na objednávku
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O knihe
The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.
- Vydavateľstvo: LAP LAMBERT Academic Publishing
- Rok vydania: 2011
- Formát: Paperback
- Rozmer: 220 x 150 mm
- Jazyk: Anglický jazyk
- ISBN: 9783844395297
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