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Anglický jazyk
Multi-run Memory Tests for Pattern Sensitive Faults
Autor: Ireneusz Mrozek
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering... Viac o knihe
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O knihe
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.
- Vydavateľstvo: Springer International Publishing
- Rok vydania: 2018
- Formát: Hardback
- Rozmer: 241 x 160 mm
- Jazyk: Anglický jazyk
- ISBN: 9783319912035
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