-
Anglický jazyk
Study of Atomic Layer Deposited HfO2/Si Interfaces
Autor: Savita Maurya
To continue scaling of MOS devices, SiO2 has to be replaced by high-K dielectric material. HfO2 is one of the prime materials with high dielectric constant has the potential to replace SiO2. HfO2 has been extensively studied by a number of authors. Still... Viac o knihe
Na objednávku
57.33 €
bežná cena: 63.70 €
O knihe
To continue scaling of MOS devices, SiO2 has to be replaced by high-K dielectric material. HfO2 is one of the prime materials with high dielectric constant has the potential to replace SiO2. HfO2 has been extensively studied by a number of authors. Still there are a number of issues that need to be addressed before to further scale down HfO2 based MOS devices. This book presents the studies done with HfO2 for future MOS device applications.
- Vydavateľstvo: LAP LAMBERT Academic Publishing
- Rok vydania: 2019
- Formát: Paperback
- Rozmer: 220 x 150 mm
- Jazyk: Anglický jazyk
- ISBN: 9786139909506
Nemecký jazyk 
