• Anglický jazyk

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Autor: Zhiqiang Li

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing... Viac o knihe

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O knihe

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7O.cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

  • Vydavateľstvo: Springer Berlin Heidelberg
  • Rok vydania: 2018
  • Formát: Paperback
  • Rozmer: 235 x 155 mm
  • Jazyk: Anglický jazyk
  • ISBN: 9783662570265

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