Usiliteli na osnove foto- i inzhekcionno-vol'taicheskogo jeffektov

Ruský jazyk

Usiliteli na osnove foto- i inzhekcionno-vol'taicheskogo jeffektov

Vydavateľstvo: LAP LAMBERT Academic Publishing
Rok vydania: 2018
Formát: Paperback
Rozmer: 220 x 150 mm
Jazyk: Ruský jazyk
ISBN: 9786139838097

Na objednávku

52.02 €

bežná cena: 57.80 €

O knihe

V monografii na osnove obnaruzhennoj svyazi foto- i inzhekcionno-vol'taicheskogo jeffektov v mnogoslojnyh poluprovodnikovyh strukturah predlozhen novyj tip usilitelej moshhnosti s avtomaticheskoj nastrojkoj toka pokoya. Privodyatsya rezul'taty vsestoronnih original'nyh issledovanij usilitel'nyh svojstv tranzistorov, pozvolivshih razrabotat' universal'nyj metod rascheta usilitelej moshhnosti pri minimal'nyh nelinejnyh iskazheniyah. Monografiya prednaznachena dlya specialistov, a takzhe magistrantov, zanimajushhihsya razrabotkoj jelementnoj bazy infokommunikacionnyh tehnologij. The monograph proposed power amplifiers with automatic tuning of the quiescent current on the basis of the findings relations of photo- and injection-voltaic effects in multilayer semiconductor structures. The results are presented of comprehensive original studies of the amplifying properties of transistors are given, which made it possible to develop a universal method for calculating power amplifiers with minimal nonlinear distortions. The monograph is intended for specialists, as well as undergraduates involved in the development of the elemental base of infocommunication technologies.