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Anglický jazyk
Field-effect Self-mixing Terahertz Detectors
Autor: Jiandong Sun
A comprehensive device model considering both spatial
distributions of the terahertz field and the field-effect self-mixing factor
has been constructed for the first time in the thesis. The author has found
that...
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O knihe
A comprehensive device model considering both spatial
distributions of the terahertz field and the field-effect self-mixing factor
has been constructed for the first time in the thesis. The author has found
that it is the strongly localized terahertz field induced in a small fraction
of the gated electron channel that plays an important role in the high
responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a
2-micron-sized gate and integrated dipole antennas has been developed and can
offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further
reducing the gate length down to 0.2 micron, a noise-equivalent power of 6
pW/Hz1/2 has been achieved. This thesis provides detailed experimental
techniques and device simulation for revealing the self-mixing mechanism
including a scanning probe technique for evaluating the effectiveness of
terahertz antennas. As such, the thesis could be served as a valuable
introduction towards further development of high-sensitivity field-effect terahertz
detectors for practical applications.
- Vydavateľstvo: Springer Berlin Heidelberg
- Rok vydania: 2016
- Formát: Hardback
- Rozmer: 241 x 160 mm
- Jazyk: Anglický jazyk
- ISBN: 9783662486795
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